| PART |
Description |
Maker |
| JANTX1N6461US JAN1N6461USE3 JANTX1N6467US |
Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional
|
Microsemi Corporation
|
| 1N6164AJANTX |
This series of industry recognized voidless
|
Microsemi Corporation
|
| 1N5190 1N5186 1N518608 1N5187 1N5188 |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
Microsemi Corporation
|
| 1N4490 1N4470 1N4461 1N4486 1N4480 1N4471 1N4473 1 |
VOIDLESS-HERMETICALLY-SEALED 1.5 WATT GLASS ZENER DIODE
|
Microsemi Corporation
|
| 1N4948 1N4942_04 |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
MICROSEMI[Microsemi Corporation]
|
| JANTX1N4947 JANTX1N4942 JANTX1N4946 JANTX1N4948 JA |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
Microsemi Corporation
|
| 1N6625 1N6620 1N6620_04 1N6621 1N6622 1N6623 1N662 |
VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
|
MICROSEMI[Microsemi Corporation]
|
| 1N5190US |
VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS 3 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| 1N6074US 1N6081US 1N6073US 1N6075US 1N6076US 1N607 |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS 0.85 A, SILICON, RECTIFIER DIODE
1.3 A, SILICON, RECTIFIER DIODE
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| 1N6355US 1N6309US 1N6310US 1N6311US 1N6312US 1N631 |
VOIDLESS-HERMETICALLY-SEALED Surface Mount 500 mW Glass Zener Diodes
|
MICROSEMI[Microsemi Corporation]
|
| 1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
